Published September 2018 | Version v1
Journal article

Stand for Studying the Effect of Proton Irradiation on Integrated Circuits: Estimation of Particle Fluxes, Activation, and Dose Rate

  • 1. Russian Academy of Sciences, Institute for Nuclear Research (Russian Federation)

Description

A stand for the irradiation of electronic integrated circuits is developed at the proton beam of the linear accelerator of the Institute for Nuclear Research, Russian Academy of Sciences. Estimation of secondary neutron fluxes in the experimental hall and in the surrounding medium outside the external shielding of the accelerator is performed. The issue of the impact of albedo protons and neutrons from the beam trap on the irradiated object is considered. The activation and cooling of the stand elements and the irradiated object as well as the dose rate are calculated. The data obtained allow safe operating conditions of the stand and optimal modes of irradiation to be selected. The calculations were carried out by the Monte Carlo method using the SHIELD hadron transport code for proton-beam parameters which are maximal at this time: energy of 209 MeV, current of 1 μA.

Additional details

Identifiers

Publishing Information

Journal Title
Surface Investigation: X-ray, Synchrotron and Neutron Techniques
Journal Volume
12
Journal Issue
5
Journal Page Range
p. 1041-1046
ISSN
1027-4510

INIS

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Copyright
Copyright (c) 2018 Pleiades Publishing, Ltd.