Room temperature light induced electron spin resonance in undoped hydrogenated amorphous silicon (a-Si:H)

The effects of illumination upon the absorption electron spin resonance spectrum of the dangling bond defect system have been studied in undoped amorphous hydrogenated silicon (a-Si:H). A small shift of the inhomogeneous envelope of the system towards higher g-value is observed at room-temperature. The shift is not accompanied by a significant change in the signal. Results are reported which indicate that this shift is not due to illumination induced heating of the specimen or calibration changes of the spectrometer. The results may be related to previously reported optical bias effects upon transient photocurrent and photoinduced absorption studies