Published August 10, 1994
| Version v1
Journal article
Thermoelectric properties and structure of MexSi1-x(Me=Ir,Fe,Re) thin films
- 1. Institute of Solid State and Materials Sciences e.V., D-01171 Dresden (Germany)
- 2. Physico-Technical Ioffe Institute, 194021 St. Petersburg (Russian Federation)
Description
The thermopower and resistivity of MexSi1-x(Me=Fe, Ir and Re) thin films have been investigated with compositions in the vicinity and outside of the stoichiometry of the corresponding semiconducting silicides. In situ measurements up to 1100 K give insight into crystallization processes during annealing of the as-deposited amorphous films. Outside the stoichiometric compositions systematic changes of the thermopower on composition have been found, which are discussed on the basis of results from phase analysis. The behavior of the Re-Si films is different in comparison with the other two systems because of the high degeneracy of the corresponding silicide ReSi2. copyright 1995 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 316
- Journal Issue
- 1
- Journal Page Range
- p. 45-49.
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 13. international conference on thermoelectrics.
- Dates
- 30 Aug - 1 Sep 1994.
- Place
- Kansas City, MO (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27024870
- Subject category
- S30: DIRECT ENERGY CONVERSION;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; IRIDIUM SILICIDES; IRON SILICIDES; RHENIUM SILICIDES; SEEBECK EFFECT; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES; THIN FILMS
- Descriptors DEC
- ELECTRICAL PROPERTIES; FILMS; IRIDIUM COMPOUNDS; IRON COMPOUNDS; PHYSICAL PROPERTIES; RHENIUM COMPOUNDS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-940830--.