Published December 1991 | Version v1
Journal article

Pressure dependence of the carrier concentration in electron- and hole-doped Ln2CuO4 superconductors

  • 1. Centre d'Etudes de Saclay, Section de Recherches de Metallurgie Physique, 91 - Gif-sur-Yvette (France)
  • 2. Univ. de Paris-Sud, Inst. des Sciences des Materiaux, 91 - Orsay (France)

Description

Results of electronic structure calculations for the T-, T*-, and T'-phase superconductors show that the planar copper-apical oxygen bond length does not play a crucial role in determining the charge redistribution under pressure. The rare earth element, the contribution of which has been ignored upto now, plays a more important role. In all three structures we find that there is a small electron transfer from the CuO2 planes to the rare earth sites which act as electron reservoirs. This results in an increase in the carrier concentration in the CuO2 planes in the hole-doped superconductors and a decrease in the electron-doped superconductors. Assuming a direct relationship between Tc and the carrier concentration we obtain an increase in Tc in the hole-doped superconductors and a modest decrease in the electron-doped superconductors. (orig.)

Additional details

Publishing Information

Journal Title
Physica. C, Superconductivity
Journal Volume
185-189
Journal Issue
pt.3
Series
Phys., C Supercond.
Journal Page Range
1681-1682
ISSN
0921-4534
CODEN
PHYCE

Conference

Title
The science of HTSC.
Acronym
3. international conference on materials and mechanisms of superconductivity high temperature superconductors (M2S-HTSC-3)
Dates
22-26 Jul 1991.
Place
Kanazawa (Japan).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
23042170
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARRIER DENSITY; CHARGE DISTRIBUTION; COPPER OXIDES; ELECTRON TRANSFER; ELECTRONIC STRUCTURE; HIGH-TC SUPERCONDUCTORS; PRESSURE DEPENDENCE; RARE EARTH COMPOUNDS; TEMPERATURE DEPENDENCE
Descriptors DEC
CHALCOGENIDES; COPPER COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS