Published July 2012 | Version v1
Journal article

The Accumulation of He on a W Surface During keV-He Irradiation: Cluster Dynamics Modeling

  • 1. Key Laboratory for Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
  • 2. Department of Physics, University of Science and Technology Beijing, Beijing 100083 (China)

Description

The accumulation of He on a W surface during keV-He ion irradiation has been simulated using cluster dynamics modeling. This is based mainly on rate theory and improved by involving different types of objects, adopting up-to-date parameters and complex reaction processes, as well as considering the diffusion process along with depth. These new features make the simulated results compare very well with the experimental ones. The accumulation and diffusion processes are analyzed, and the depth and size dependence of the He concentrations contributed by different types of He clusters is also discussed. The exploration of the trapping and diffusion effects of the He atoms is helpful in understanding the evolution of the damages in the near-surface of plasma-facing materials under He ion irradiation.

Availability note (English)

Available from http://dx.doi.org/10.1088/1009-0630/14/7/13

Additional details

Identifiers

Publishing Information

Journal Title
Plasma Science and Technology
Journal Volume
14
Journal Issue
7
Journal Page Range
p. 624-628
ISSN
1009-0630