Comparative analysis of limiting photoconversion efficiency of usual solar cells and solar cells with quantum wells

An analytical approach to calculation of limiting photoconversion efficiency η in solar cells with quantum wells is suggested and the value of η is compared with the limiting photoconversion efficiency of usual solar cells. In the described approach, along with bulk recombination, surface recombination at the barrier semiconductor-quantum well interfaces is taken into account. Features of formation of open-circuit voltage in Si-based p-i-n structures with long lifetimes of nonequilibrium charge carriers and in GaAs-based structures with short lifetimes of nonequilibrium carriers are compared.