Published February 2003
| Version v1
Journal article
Monte Carlo simulation of growth of thin film prepared by pulsed laser
Creators
- 1. Huazhong Univ. of Science and Technology, Wuhan (China). Dept. of Physics
Description
We use the Monte Carlo simulation method to perform the early growth stage of thin film prepared by pulsed laser deposition. We focus on the number of point defects on the substrate surface varying with the energy density of laser and substrate temperature. The results show that the laser energy and the substrate temperature strongly affect the morphology and size of the growth islands and the deposition rate of thin film. Our results are in good agreement with the related experimental results
Additional details
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 20
- Journal Issue
- 2
- Journal Page Range
- p. 263-266
- ISSN
- 0256-307X
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 35020462
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEPOSITION; ENERGY DENSITY; LASER RADIATION; MONTE CARLO METHOD; MORPHOLOGY; POINT DEFECTS; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; FILMS; RADIATIONS