Published March 1987
| Version v1
Journal article
Ion beam mixing of Ti/Si-Layers
Description
The formation of TiSi2 under ion irradiation at various temperatures and ion energies has been investigated. At substrate temperatures exceeding 300OC polycrystalline disilicide with smooth surfaces has been obtained. Optimal mixing efficiency was achieved by adjusting the ion energy to those values that the generated damage distribution drops rapidly beyond the Ti/Si interface
Additional details
Publishing Information
- Journal Title
- Vide. Couches Minces
- Journal Volume
- 42
- Journal Issue
- 236
- Series
- Vide. Couches Minces.
- Journal Page Range
- 129-131
- ISSN
- 0042-5281
- CODEN
- VIDEA
Conference
- Title
- European colloquium on refractory metals and silicon.
- Dates
- 24-26 Mar 1987.
- Place
- Aussois (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 18093718
- Subject category
- S38: RADIATION CHEMISTRY, RADIOCHEMISTRY AND NUCLEAR CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL RADIATION EFFECTS; ENERGY DEPENDENCE; FILMS; HIGH TEMPERATURE; ION IMPLANTATION; KRYPTON IONS; LOW TEMPERATURE; MEDIUM TEMPERATURE; TEMPERATURE DEPENDENCE; TITANIUM; TITANIUM SILICIDES
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; IONS; METALS; RADIATION EFFECTS; SILICIDES; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS