Published 1990
| Version v1
Report
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Experimental findings on self-recovery and improvement of representative parameters of some semiconductor devices as irradiated in fast neutron flux
- 1. Joint Inst. for Nuclear Research, Dubna (USSR). Lab. of Neutron Physics
Description
Semiconductor devices (Si-Li detectors, diodes, transistors and integrated circuits) were irradiated at a nuclear reactor up to 2.8x1014nxcm-2(En>0.5 MeV) and a 14 MeV neutron generator up to 1013 nxcm-2. While testing radiation damage it was seen that some Si-Li detectors and integrated circuits showed the effects of self-recovery and improvement of electrical characteristics. 5 refs.; 1 fig.; 3 tabs
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22086008.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- JINR-E--14-90-345
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22086008
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- FAST NEUTRONS; FLUX DENSITY; IBR-2 REACTOR; INTEGRATED CIRCUITS; LI-DRIFTED SI DETECTORS; NEUTRON FLUX; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DIODES; TRANSISTORS
- Descriptors DEC
- BARYONS; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; EPITHERMAL REACTORS; FAST REACTORS; FERMIONS; HADRONS; LI-DRIFTED DETECTORS; MEASURING INSTRUMENTS; NEUTRONS; NUCLEONS; PULSED REACTORS; RADIATION DETECTORS; RADIATION EFFECTS; RADIATION FLUX; REACTORS; RESEARCH AND TEST REACTORS; RESEARCH REACTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SI SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- Submitted to Nucl. Instrum. Methods.