The modulation of the base layer conductivities in p+-n-n+-structures on the basis of polycrystalline silicon

The S-type characteristics of ion-implanted structures on basis of polycrystalline n-type silicon, caused by changing grain boundaries and base conductivities under thermal processing are explored. It is established that irradiation by α-particle creates conditions for modulation of the base conductivity and injection reinforcement of a photocurrent that allows the p-n-structure photosensitive to be increased. (authors)