Published March 1999 | Version v1
Journal article Metadata-only

Thermostable Schottky diode on the basis of Ge/GaAs heterostructure

Creators

  • 1. Inst. Fiziki Poluprovodnikov, Kiev (Ukraine)
  • 2. Inst. Khimii Poverkhnosti, Kiev (Ukraine)

Description

The effect of thermal treatment at 300 and 500 deg C for 5 hours in vacuum on electrophysical properties of Au/Ge/GaAs contact and concentration depth profiles at Ge/GaAs interface has been investigated. The improved thermostability of electrophysical parameters of Au/Ge/GaAs heterojunctions due to formation of oxide phases in the transition region of Ge/GaAs interface which prevent interphase diffusion in Ge/GaAs contact has been established

Abstract (Russian)

Исследовано влияние термообработки при 300 и 500 град. С в течение 5 ч в вакууме на электрофизические характеристики контакта Au/Ge/GaAs и концентрационные профили распределения элементов на межфазной границе Ge/GaAs. Установлена повышенная термостабильность электрофизических параметров гетеропереходов Au/Ge/GaAs, обусловленная формированием в переходной области гетерограницы Ge/GaAs оксидных фаз, препятствующих межфазной диффузии в контакте Ge/GaAs

Additional details

Additional titles

Original title (Russian)
Термостойкий диод Шоттки на основе гетероструктуры Ге/GaAs

Publishing Information

Journal Title
Poverkhnost'. Rentgenovskie, Sinkhrotronnye i Nejtronnye Issledovaniya
Journal Issue
no.3
Journal Page Range
p. 60-62
ISSN
1028-0960

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
31020703
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; GALLIUM ARSENIDES; GERMANIUM; HETEROJUNCTIONS; OXIDES; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SPATIAL DISTRIBUTION; STABILITY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; DISTRIBUTION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EMISSION; EQUIPMENT; GALLIUM COMPOUNDS; HEAT TREATMENTS; LUMINESCENCE; METALS; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE RANGE

Optional Information

Notes
8 refs., 4 figs.