Lattice model of jump conductivity on nearest neighbors: application to neutron-doped Ge:Ga

The model, wherewith the basic and compensating additions in the crystalline matrix form a sole simple cubic lattice, is developed with the purpose of describing the jump transport on the nearest neighbors. The jumps occur by the thermal activated alignment of the basic additions levels, whereas the compensating additions block the corresponding nodes. The sufficiently high temperatures, whereby the interactions, leading to the Coulomb gaps, may be neglected and the density of states in the basic additions zone may be assumed as the Gaussian one, are considered. The concentration dependences of the jump conductivity activation energy ε3, which has the form of a curve with the maximum, and also its preexponential multiplier σ3 are determined. The results are compared with the experimental data, obtained by various authors for the neutron-doped Ge:Ga