Studying of F-Doped Tin Oxide Thin Films F With Different Concentration:Sno2

Thin films of fluorine-doped tin oxide (SnO2:F) on glass substrates were deposited by spray pyrolysis technique using (SnCl2:2H2O) and ammonium fluoride (NH4F) as precursors with the various fluorine doping levels ranging from (5 to 20) wt%. X-ray diffraction (XRD) studies revealed that the films have Tetragonal structure S.G : (P42/ mnm). It revealed that the undoped films grow along the preferred orientation of (211), whereas all the doped films grow along (200). The band gap energy was calculated. Eg values were found to initially increase with increasing the fluorine content up to 15 wt.%. The minimum resistivity were observed for films doped with 15 wt.% . So, it is optimal concentration for getting a good structural, optical and electrical properties. (author)