Visible-light photocatalytic activity of Ni-doped TiO2 from ab initio calculations
- 1. Institute of Modern Physics, Northwest University, Xi'an 710069 (China)
- 2. Department of Applied Chemistry, Institute of Molecular Science and Center for Interdisciplinary Molecular Science, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)
- 3. Department of Physics, Northwest University, Xi'an 710069 (China)
- 4. School of Chemical Engineering, Northwest University, Xi'an 710069 (China)
Description
Highlights: ► Ni 3d states are located in the band gap of substitutional Ni to O(Ti)-doped TiO2. ► The band gap has a slightly decline about 0.05 eV compared with the pure TiO2. ► Impurity energy levels result in a decrease of the photon excitation energy. ► Ni-doped TiO2 enhances photocatalytic activity and red-shift of absorption edge. - Abstract: The geometrical structures and electronic properties of Ni-doped anatase and rutile TiO2 were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). Our results show that most Ni 3d states are located in the forbidden band of substitutional Ni to O-doped anatase and rutile TiO2, and mix with O 2p states, resulting in a decrease of the photon excitation energy and red-shift of absorption edge compared to pure anatase and rutile. For substitutional Ni to Ti-doped anatase TiO2 under O-rich growth condition, the band gap has a slight decline of about 0.05 eV compared with pure anatase TiO2 and contains a series of impurity energy levels, which may be responsible for the experimental photocatalytic activity and red-shift of absorption edge.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.matchemphys.2012.01.083Additional details
Identifiers
- DOI
- 10.1016/j.matchemphys.2012.01.083;
- PII
- S0254-0584(12)00107-1;
Publishing Information
- Journal Title
- Materials Chemistry and Physics
- Journal Volume
- 133
- Journal Issue
- 2-3
- Journal Page Range
- p. 746-750
- ISSN
- 0254-0584
- CODEN
- MCHPDR
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44020836
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY LEVELS; EV RANGE; EXCITATION; OPTICAL PROPERTIES; PHOTOCATALYSIS; PHOTONS; RED SHIFT; RUTILE; SEMICONDUCTOR MATERIALS; TITANIUM OXIDES; VISIBLE RADIATION
- Descriptors DEC
- BOSONS; CALCULATION METHODS; CATALYSIS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; MASSLESS PARTICLES; MATERIALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; RADIOACTIVE MATERIALS; RADIOACTIVE MINERALS; SIMULATION; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.