Published January 20, 2014 | Version v1
Journal article Metadata-only

Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding

Creators

  • 1. Microphotonics Center and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
  • 2. Department of Physics and the Engineering Program, University of Massachusetts at Boston, Boston, Massachusetts 02125 (United States)

Description

Silicon-on-nitride (SON) is a convenient, low-loss platform for mid-infrared group IV plasmonics and photonics. We have designed 5-layer SON channel-waveguides and slab-waveguides for the 2.0 to 5.4 μm wavelength range and have simulated the resulting three-dimensional (3D) and two-dimensional (2D) SON gap-plasmon modes. Our simulations show propagation lengths of ∼60 μm for 3D gap-strip modes having a 0.003 λ2 cross-section. Because the ∼50-nm SON (Si3N4) mode region is also a gate insulator between silver (Ag) and n-doped Silicon (Si), metal-oxide-semiconductor accumulation gating is available for electro-optical loss modulation of the gap-confined mode

Additional details

Identifiers

DOI
10.1063/1.4862795;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
3
Journal Page Range
p. 031115-031115.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45101956
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPUTERIZED SIMULATION; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; LAYERS; MODULATION; OXIDES; PLASMONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDES; SILVER; WAVEGUIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PNICTIDES; QUASI PARTICLES; SEMIMETALS; SILICON COMPOUNDS; SIMULATION; TRANSITION ELEMENTS

Optional Information

Notes
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