Experimental study of electron radiation angular distribution during axial channeling in silicon crystal

Angular distributions of γ-radiation depending on γ-quantum energy are investigated. When conducting measurements, the energy and angle of escape from crystal target are recorded for each γ-quantum. The electron energy makes up E0=900 MeV. The angular electron beam devergence U0=10-4 rad. Silicon crystal oriented by (100) axis is used as a target. The crystal thickness t=0.37 mm. 2 refs.; 2 figs