Published January 12, 2004 | Version v1
Journal article Metadata-only

Spectroscopic observation of oxidation process in InN

Creators

  • 1. Faculty of Education, Wakayama University, Wakayama 640-8510 (Japan)
  • 2. Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)
  • 3. Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585 (Japan)
  • 4. Research Center for Superconductor Photonics, Osaka University, Yamadaoka, Suita, Osaka, 565-0871 (Japan)
  • 5. Department of Applied Physics, Osaka University, Yamadaoka, Suita, Osaka 565-0871 (Japan)

Description

Spectroscopic observations of high-quality wurtzite InN have shown that oxygen is easily incorporated in the crystal by thermal treatments in the air. Incorporation of oxygen may play a key role in determining the apparent properties of InN including the bandgap and the lattice constant. It is shown that Raman scattering is a sensitive tool to probe the oxygen incorporation process and associated deterioration in crystallinity

Additional details

Identifiers

DOI
10.1063/1.1639511;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
84
Journal Issue
2
Journal Page Range
p. 212-214
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36027973
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AIR; CRYSTAL GROWTH; ENERGY GAP; HEAT TREATMENTS; INDIUM NITRIDES; LATTICE PARAMETERS; MOLECULAR BEAM EPITAXY; OXIDATION; OXYGEN; RAMAN EFFECT; RAMAN SPECTROSCOPY
Descriptors DEC
CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; FLUIDS; GASES; INDIUM COMPOUNDS; LASER SPECTROSCOPY; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; SPECTROSCOPY

Optional Information

Notes
(c) 2004 American Institute of Physics.