Published May 7, 2015 | Version v1
Journal article Metadata-only

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

Creators

  • 1. Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, 212-8582 Kawasaki (Japan)
  • 2. Graduate School of Engineering Science, Osaka University, 1-3, Machikaneyama-cho, Toyonaka city, Osaka 560-8531 (Japan)
  • 3. Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

Description

Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - tMgO plot (RA: resistance area product, tMgO: thickness of MgO tunnel barrier) in CoFe/MgO/n+-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (PSi) in Si. The estimated absolute values of PSi using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. To demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n+-Si junction electrode is important

Additional details

Identifiers

DOI
10.1063/1.4907242;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
117
Journal Issue
17
Journal Page Range
vp.
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46115882
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COBALT; CORRELATIONS; ELECTRIC CONTACTS; INTERMETALLIC COMPOUNDS; IRON; MAGNESIUM OXIDES; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; SILICON; SPIN; SPIN ORIENTATION; TUNNEL EFFECT
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ALLOYS; ANGULAR MOMENTUM; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; MAGNESIUM COMPOUNDS; METALS; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SEMIMETALS; TRANSITION ELEMENTS

Optional Information

Notes
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