Published March 9, 2011 | Version v1
Journal article

Photoluminescence properties of erbium-doped europium thiosilicate

  • 1. Department of Applied Physics and Chemistry, University of Electro-Communications, Chofu, Tokyo 182-8585 (Japan)

Description

Photoluminescence properties of erbium-doped europium thiosilicate (Eu2SiS4 : Er) are reported. The material is fabricated in powder and on silicon substrates. The luminescence at 1.54 μm corresponding to the 4I13/2-4I15/2 transition of Er3+ is observed. Broad absorption of the 4f7-4f65d transition of Eu2+ in the host matrix in 350-500 nm region is used for the excitation of Er3+. Efficient energy transfer from the host to erbium is realized.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/44/9/095404

Additional details

Identifiers

DOI
10.1088/0022-3727/44/9/095404;
PII
S0022-3727(11)74735-0;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
44
Journal Issue
9
Journal Page Range
[5 p.]
ISSN
0022-3727
CODEN
JPAPBE