Ellipsometric study of tellurium implanted silicon

Ellipsometric parameters as a function of the dose (D 2.1013 to 2.1015 ions cm-2) and annealing temperature have been measured on silicon implanted with 30 keV Te ions. Information on lattice disorder is to a great extent comparable with that of other methods, e.g. backscattering technique. Optical constants of a damage surface layer may be estimated. (author)