Published 1988 | Version v1
Book Metadata-only

Ge related defect-complex induced luminescence in InGaAsP

Creators

  • 1. Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005 (India)

Description

Germanium doping of InGaAsP epitaxial layers grown by liquid phase epitaxy produces n type conduction with a net distribution coefficient K/sub Ge/sup --// 5x10/sup -3/. In addition, Ge doping introduces a broad band (--0.2eV) of efficient luminescence which is red shifted with respect to the band edge. The intensity of this band grows with increasing Ge concentration. In all the samples, the integrated intensity of the broad band varies relatively less in the temperature range 15K to about 90K. At higher temperatures, the intensity falls exponentially with an activation energy of 0.05 - 0.07 eV. The emission spectra are compared with the configuration-coordinate model of the emission from a Ge related complex

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
0-931837-72-3
Imprint Title
Defects in electronic materials
Journal Page Range
p. 505-508.

Conference

Title
Symposium on defects in electronic materials.
Dates
30 Nov - 1 Dec 1987.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20068029
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; CRYSTAL DOPING; DOPED MATERIALS; EMISSION SPECTRA; EPITAXY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; GERMANIUM; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; LIQUIDS; LUMINESCENCE; MATHEMATICAL MODELS; N-TYPE CONDUCTORS; STRUCTURAL CHEMICAL ANALYSIS; VERY LOW TEMPERATURE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTS; EMISSION; FLUIDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; SEMICONDUCTOR MATERIALS; SPECTRA