Published 1989 | Version v1
Journal article Metadata-only

Formation of Ag/Si and Al/Si films by ion assisted deposition

Creators

  • 1. Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Metallurgy
  • 2. Wuhan Univ. (China). Dept. of Physics

Description

The Al and Ag films made by IVD were significantly modified in both mechanical and electrical properties. The cause lies in the deposition parameters: bombardment energy and ion/atom arrival rate ratio. It was found that the Al film hardness, the Al-Si contact resistivity and the Al-Si adhesion were improved in the deposition range: energy 250-500 eV and arrival ratio 0.06-0.10. (author)

Additional details

Publishing Information

Journal Title
Vacuum
Journal Volume
39
Journal Issue
2-4
Series
Vacuum.
Journal Page Range
425-428
ISSN
0042-207X
CODEN
VACUA

Conference

Title
international symposium on applications of ion beams produced by small accelerators.
Acronym
Ion beam interactions with matter
Dates
20-24 Oct 1987.
Place
Jinan (China).

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
20053960
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ADHESION; ALUMINIUM; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; FILMS; GRAIN GROWTH; HARDNESS; ION BEAMS; ION IMPLANTATION; SILICON; SILVER
Descriptors DEC
BEAMS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; MECHANICAL PROPERTIES; METALS; PHYSICAL PROPERTIES; SEMIMETALS; TRANSITION ELEMENTS