Published January 31, 1991
| Version v1
Journal article
Buried stacked insulator: new SOI-structure formed by ion beam synthesis
- 1. Central Inst. for Nuclear Research, Dresden (Germany, F.R.)
- 2. Antwerp Univ. (Belgium). Dept. Natuurkunde en Fysica van de vaste Stof
- 3. Center for Microelectronics, Dresden (Germany, F.R.)
Description
The formation of a new SOI-structure is proposed and the first experimental results are presented. Using high dose implantation of nitrogen and oxygen, a buried stacked layer consisting of silicon dioxide (upper part), silicon oxynitride (medium part) and silicon nitride (lower part) was formed in single crystalline silicon. (author)
Additional details
Publishing Information
- Journal Title
- Electronics Letters
- Journal Volume
- 27
- Journal Issue
- 3
- Series
- Electron. Lett.
- Journal Page Range
- 202-204
- ISSN
- 0013-5194
- CODEN
- ELLEA
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 22039794
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DOSE RATES; ELECTRICAL INSULATORS; ION BEAMS; ION IMPLANTATION; LAYERS; MONOCRYSTALS; NITROGEN IONS; OXYGEN IONS; SILICON; SILICON NITRIDES; SILICON OXIDES; SUBSTRATES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTALS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; IONS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS