Layer sliding and twisting induced electronic transitions in correlated magnetic 1T-NbSe bilayers
Creators
- 1. Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872 (China)
- 2. Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872 (China)
- 3. MIIT Key Laboratory for Low‐Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081 (China)
- 4. College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518061 (China)
Description
Correlated 2D layers, like 1T-phases of TaS, TaSe, and NbSe, exhibit rich tunability through varying interlayer couplings, which promotes the understanding of electron correlation in the 2D limit. However, the coupling mechanism is, so far, poorly understood and is tentatively ascribed to interactions among the d orbitals of Ta or Nb atoms. Here, it is theoretically shown that the interlayer hybridization and localization strength of interfacial Se p orbitals, rather than Nb d orbitals, govern the variation of electron-correlated properties upon interlayer sliding or twisting in correlated magnetic 1T-NbSe bilayers. Each of the layers is in a star-of-David (SOD) charge-density-wave phase. Geometric and electronic structures and magnetic properties of 28 different stacking configurations are examined and analyzed using density-functional-theory calculations. It is found that the SOD contains a localized region, in which interlayer Se p hybridization plays a paramount role in varying the energy levels of the two Hubbard bands. These variations lead to three electronic transitions among four insulating states, which demonstrate the effectiveness of interlayer interactions to modulate correlated magnetic properties in a prototypical correlated magnetic insulator. (© 2023 Wiley‐VCH GmbH)
Availability note (English)
Available from: http://dx.doi.org/10.1002/adfm.202302989Additional details
Identifiers
Publishing Information
- Journal Title
- Advanced Functional Materials (Internet)
- Journal Volume
- 33
- Journal Issue
- 38
- Journal Page Range
- p. 1-9
- ISSN
- 1616-3028
- CODEN
- AFMDC6
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 54120218
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE DENSITY; DENSITY FUNCTIONAL METHOD; ELECTRON CORRELATION; ELECTRONIC STRUCTURE; HYBRIDIZATION; LAYERS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; NIOBIUM SELENIDES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CORRELATIONS; MATERIALS; NIOBIUM COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Notes
- AID: 2302989