Published March 2007 | Version v1
Journal article

Magnetic and electric properties of Fe-doped ITO thin films

  • 1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
  • 2. Department of Materials Science, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550 (Japan)

Description

Films of Fe-doped ITO were epitaxially grown at oxygen (including 8% ozone) partial pressures of 5, 1, 1x10-1,1x10-2, and 1x10-3 Pa on yttria-stabilized zirconia substrates by a pulsed-laser deposition method. Magnetic and electric properties of the films varied systematically with the oxygen partial pressure. The films grown at 5 and 1 Pa were paramagnetic and semiconducting, that at 10-1 Pa was ferromagnetic and semiconducting, and those at 10-2 and 10-3 Pa were ferromagnetic and metallic. The Fe-ITO films grown at the pressure below 10-1 Pa exhibited room-temperature ferromagnetism

Additional details

Identifiers

DOI
10.1016/j.jmmm.2006.10.781;
PII
S0304-8853(06)01932-9;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
310
Journal Issue
2
Journal Page Range
p. e717-e719
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
17. International Conference on Magnetism
Dates
20-25 Aug 2006
Place
Kyoto (Japan)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.