Capacitance spectroscopy of deep radiation levels in n-type silicon irradiated with hydrogen and helium ions

Deep level transient spectroscopy (DLTS) was used to investigate the composition and parameters of levels of radiation defects in n-type silicon irradiated with 7.8 MeV hydrogen ions and 25.2 MeV helium ions. The electrical resistivity was ρ = 1, 10, and 100 Ω·cm. In all cases the irradiated samples had one set of radiation levels, which was basically the same as that given in the published literature for n-type silicon irradiated with electrons, neutrons, and ions of lower energies. The nature of radiation defects responsible for the deep levels was determined