Effects of N-ion implantation on the electrical and photoelectronic properties of MoS${}_2$ field effect transistors

Ion implantation is widely used in the semiconductor industry as an important method of controlling the performance of semiconductor materials. As a 2D material with fantastic physical characteristics, MoS${}_2$ has been receiving extensive attention for its potential applications in electronic devices. N element is an impurity objectively existing in semiconductors. It may come from the semiconductor manufacturing process or the environment. Therefore, the effect of N element implantation on the material, electrical, and photoelectronic properties of MoS${}_2$ field effect transistor (FET) is reported. The results of Raman and photoluminescence (PL) shows that N-ion implant caused the expansion of the MoS${}_2$ lattice and the disappearance of the characteristic peaks of PL. The prepared MoS${}_2$ FET exhibits a slow photoelectric response to 254 nm UV, and a fast photoelectric response to 650 and 532 nm lasers. After ion implant and annealing, the electrical performance and photocurrent of the MoS${}_2$ FET are significantly degraded. The research has a guiding role in impurity control in the semiconductor manufacturing process. (© 2021 Wiley‐VCH GmbH)