Published January 2025 | Version v1
Journal article

Field-induced butterfly-like anisotropic magnetoresistance in a kagome semimetal Co3In2S2

  • 1. Division of Functional Material Research, Central Iron & Steel Research Institute, Beijing, 100081 (China)
  • 2. Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 (China)
  • 3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 (China)
  • 4. Multidisciplinary Center for Infrastructure Engineering, Shenyang University of Technology, Shenyang, Liaoning, 110870 (China)
  • 5. Songshan Lake Materials Laboratory, Dongguan, 523808 (China)

Description

With the interplay between magnetism and topological bands, magnetic kagome semimetals provide promising platforms for exploring exotic correlated electronic states and quantum phenomena such as anomalous Hall effect, quantum spin liquid, and unconventional magnetoresistance, as well as driving advances in electronic and spintronic applications. Here, a field-induced butterfly-like anomalous anisotropic magnetoresistance (AMR) effect in an intriguing kagome semimetal Co3In2S2 is reported. The kagome-lattice Co3In2S2 single crystals are synthesized via a polycrystal-source chemical vapor transport approach, possessing a high carrier mobility reaching 104 cm2 V1s1. The Co3In2S2 single crystal exhibits a canted antiferromagnetic state below 5 K, but intriguingly, it is easily transformed into a ferromagnetic state under a small external magnetic field. Furthermore, the planar Hall effect (PHE) is detected, stemming from the complex contribution of field-induced ferromagnetism and orbital magnetoresistance. Remarkably, as the magnetic field increases, the low-temperature magnetoresistance behavior of the Co3In2S2 reveals a butterfly-like AMR effect with a maximum value of 850%, exhibiting a superposition of the two-, four-, and six-fold AMR terms. Band structure calculations suggest that such a field-induced butterfly-like AMR effect may originate from the modulations of the electronic structure near the Fermi level by the magnetic moment. The findings offer a valuable platform for understanding the anomalous AMR effect and for the development of advanced spintronic devices. (© 2024 Wiley‐VCH GmbH)

Availability note (English)

Available from: http://dx.doi.org/10.1002/adfm.202412876

Additional details

Publishing Information

Journal Title
Advanced Functional Materials (Internet)
Journal Volume
35
Journal Issue
2
Journal Page Range
p. 1-9
ISSN
1616-3028
CODEN
AFMDC6

Optional Information

Notes
AID: 2412876