Field-induced butterfly-like anisotropic magnetoresistance in a kagome semimetal CoInS
Creators
- 1. Division of Functional Material Research, Central Iron & Steel Research Institute, Beijing, 100081 (China)
- 2. Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 (China)
- 3. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 (China)
- 4. Multidisciplinary Center for Infrastructure Engineering, Shenyang University of Technology, Shenyang, Liaoning, 110870 (China)
- 5. Songshan Lake Materials Laboratory, Dongguan, 523808 (China)
Description
With the interplay between magnetism and topological bands, magnetic kagome semimetals provide promising platforms for exploring exotic correlated electronic states and quantum phenomena such as anomalous Hall effect, quantum spin liquid, and unconventional magnetoresistance, as well as driving advances in electronic and spintronic applications. Here, a field-induced butterfly-like anomalous anisotropic magnetoresistance (AMR) effect in an intriguing kagome semimetal CoInS is reported. The kagome-lattice CoInS single crystals are synthesized via a polycrystal-source chemical vapor transport approach, possessing a high carrier mobility reaching 10 cm Vs. The CoInS single crystal exhibits a canted antiferromagnetic state below 5 K, but intriguingly, it is easily transformed into a ferromagnetic state under a small external magnetic field. Furthermore, the planar Hall effect (PHE) is detected, stemming from the complex contribution of field-induced ferromagnetism and orbital magnetoresistance. Remarkably, as the magnetic field increases, the low-temperature magnetoresistance behavior of the CoInS reveals a butterfly-like AMR effect with a maximum value of 850%, exhibiting a superposition of the two-, four-, and six-fold AMR terms. Band structure calculations suggest that such a field-induced butterfly-like AMR effect may originate from the modulations of the electronic structure near the Fermi level by the magnetic moment. The findings offer a valuable platform for understanding the anomalous AMR effect and for the development of advanced spintronic devices. (© 2024 Wiley‐VCH GmbH)
Availability note (English)
Available from: http://dx.doi.org/10.1002/adfm.202412876Additional details
Publishing Information
- Journal Title
- Advanced Functional Materials (Internet)
- Journal Volume
- 35
- Journal Issue
- 2
- Journal Page Range
- p. 1-9
- ISSN
- 1616-3028
- CODEN
- AFMDC6
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIFERROMAGNETISM; CARRIER MOBILITY; COBALT SULFIDES; ELECTRONIC STRUCTURE; FERROMAGNETISM; HALL EFFECT; INDIUM SULFIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; MONOCRYSTALS; SEMIMETALS
- Descriptors DEC
- CHALCOGENIDES; COBALT COMPOUNDS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; INDIUM COMPOUNDS; MAGNETISM; MOBILITY; PHYSICAL PROPERTIES; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- AID: 2412876