Published October 2010 | Version v1
Journal article

Controlling the photoluminescence of ZnO:Si nano-composite films by heat-treatment

  • 1. Department of Applied Sciences, Indira Gandhi Institute of Technology, Guru Gobind Singh Indraprastha University, Delhi 110 006 (India)
  • 2. Department of Physics and Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110 007 (India)

Description

Nano-composite thin films of silicon and zinc oxide were deposited on glass substrates using thermal co-evaporation. On heating the films at different temperatures and different atmospheric pressures, the photoluminescence (PL) emission spectra become broad, giving emissions in UV-Blue, Green and Red region. Analyses reveal that defect-dominated structure of ZnO contributes to the broad PL spectra observed. X-ray diffraction and Raman spectra analysis show that the defects caused by oxygen vacancies decrease with heating which is accompanied by a competing process of decrease in grain size made possible by surrounding silicon reacting at the surface of the ZnO nano-cluster grains giving new bonds, possibly O-Si-Zn bonds. Crystallinity of nano-grains and defects contribute different emission peaks that depending on relative contributions can give comparable peaks resulting in broad emission spectra. The study shows that simple post-deposition process can lead to fabrication of white light emitting devices based on these nano-composites. Best emission spectra are obtained by heating at a temperature of 250 oC in low vacuum.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.materresbull.2010.06.049

Additional details

Identifiers

DOI
10.1016/j.materresbull.2010.06.049;
PII
S0025-5408(10)00252-7;

Publishing Information

Journal Title
Materials Research Bulletin
Journal Volume
45
Journal Issue
10
Journal Page Range
p. 1368-1374
ISSN
0025-5408
CODEN
MRBUAC

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.