Published September 1983
| Version v1
Journal article
On the possibility of thermomodeling of subthreshold radiation effects in semiconductors
Creators
- 1. Khar'kovskij Gosudarstvennyj Univ. (Ukrainian SSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- О возможности термомоделирования подпороговых радиационных эффектов в полупроводниках
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 17
- Journal Issue
- 9
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1724
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 15029246
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- AGING; FRENKEL DEFECTS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; MATERIALS; POINT DEFECTS; RADIATION EFFECTS; VACANCIES
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).