Published May 1, 1982
| Version v1
Journal article
The pulse height defect for heavy ions in silicon surface barrier detectors
- 1. Gesellschaft fuer Schwerionenforschung m.b.H., Darmstadt (Germany, F.R.)
Description
The pulse height defect (PHD) of silicon surface barrier detectors (Si-SBD) was observed for ions of Kr, Xe, W, Bi and U with energies up to 1.4 MeV/amu. The obtained recombination defect does not show the linear dependence on the stopping power of silicon. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res.
- Journal Volume
- 196
- Journal Issue
- 1
- Series
- Nucl. Instrum. Methods Phys. Res.
- Journal Page Range
- 153-155
- ISSN
- 0029-554X
Conference
- Title
- INS international symposium on nuclear radiation detectors.
- Dates
- 23 - 26 Mar 1981.
- Place
- Tokyo, Japan.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 13700455
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ION DETECTION; PULSES; RECOMBINATION; SI SEMICONDUCTOR DETECTORS; SILICON; STOPPING POWER; SURFACE BARRIER DETECTORS
- Descriptors DEC
- CHARGED PARTICLE DETECTION; ELEMENTS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS