Published January 30, 2004
| Version v1
Journal article
Formation of ytterbium silicide nanowires on Si(0 0 1)
Description
We demonstrate ability to form self-assembled nanowires of Yb silicide on Si(0 0 1) by means of solid phase epitaxy. Such nanowires, in contrast to those of other rare earth silicides, are shown to exhibit an unexpectedly wide variety of orientations with respect to the Si substrate. Their spontaneous formation is explained in terms of the hexagonal AlB2 structure of silicon-rich Yb disilicide
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2003.09.005;
- PII
- S0169433203011395;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 222
- Journal Issue
- 1-4
- Journal Page Range
- p. 394-398
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38090050
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM BORIDES; EPITAXY; QUANTUM WIRES; SCANNING TUNNELING MICROSCOPY; SILICIDES; SILICON; SURFACES; YTTERBIUM COMPOUNDS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; BORIDES; BORON COMPOUNDS; CRYSTAL GROWTH METHODS; ELEMENTS; MICROSCOPY; NANOSTRUCTURES; RARE EARTH COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.