Published 2010
| Version v1
Miscellaneous
Simulation of life time dependency of non-substantive charge carriers on the type and point defect concentration in the silicon crystals
- 1. National Technical University 'Kharkiv Polytechnical Institute', Kharkiv (Ukraine)
Description
no abstract available
Additional details
Additional titles
- Original title (Ukrainian)
- Modelyuvannya zalezhnostyi chasu zhittya neosnovnikh nosyiyiv zaryadu vyid tipu ta kontsentratsyiyi tochkovikh defektyiv v kristalakh kremnyiyu
Publishing Information
- Imprint Place
- Kremenchuk (Ukraine)
- ISBN
- 978-966-8931-70-3
- Imprint Title
- 4. International Scientific-practical conference on materials of electronic techniques and modern informational technologies (METIT-4). Abstracts
- Imprint Pagination
- 248 p.
- Journal Page Range
- p. 178-180
- Report number
- INIS-UA--166
Conference
- Title
- 4. International scientific-practical conference
- Original Conference Title
- 4. Mezhdunarodna naukovo-praktichna konferentsyiya
- Dates
- 19-21 May 2010
- Place
- Kremenchuk (Ukraine)
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 42100334
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- CARRIER LIFETIME; CHARGE CARRIERS; COMPUTERIZED SIMULATION; CRYSTAL DOPING; CZOCHRALSKI METHOD; MONOCRYSTALS; POINT DEFECTS; P-TYPE CONDUCTORS; SILICON; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; LIFETIME; MATERIALS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SIMULATION