Published December 1993
| Version v1
Journal article
Reliability effects of x-ray lithography exposures on submicron-channel MOSFETs
Description
Submicron-channel-length n and p-channel MOSFETs subjected to channel hot-carrier stressing were investigated, and the reliability of devices with and without exposure to simulated x-ray lithography processing steps was compared. No significant differences were observed between the sample groups
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 40
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 1367-1371.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- international nuclear and space radiation effects conference.
- Acronym
- NSREC '93
- Dates
- 19-23 Jul 1993.
- Place
- Snowbird, UT (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26026409
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE CARRIERS; MASKING; MOSFET; PHYSICAL RADIATION EFFECTS; RELIABILITY; TRAPPING; X RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; IONIZING RADIATIONS; MOS TRANSISTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-930704--.