Published March 2007
| Version v1
Journal article
Capacitance-voltage diagnostics of heterostructures with quantum wells InxGa1-xAs/GaAs: band offsets, energy quantization levels, wave functions
Creators
- 1. Sankt-Peterburgskij Gosudarstvennyj Ehlektrotekhnicheskij Univ. LEhTI, Sankt-Peterburg (Russian Federation)
Description
The method of capacitance-voltage profiling combined with self-consistent solution of Schroedinger and Poisson equations is used to determine with the high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of InxGa1-xAs/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). The characterization technique based on capacitance measurements is developed for determination the main electronic parameters of quantum-confinement heterostructures
Abstract (Russian)
В диапазоне псевдоморфного роста гетероструктур с квантовыми ямами InxGa1-xAs/GaAs (0< x < 0.30) методом вольт-фарадного профилирования самосогласованного расчета уравнений Шредингера и Пуассона прецизионно определены абсолютные величины разрывов зоны проводимости, уровни энергии размерного квантования, концентрации носителей заряда в подзонах квантования. Развит метод емкостной диагностики квантово-размерных гетероструктур для определения их основных электронных свойствAdditional details
Additional titles
- Original title (Russian)
- Диагностика гетероструктур с квантовыми ямами Ин
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 41
- Journal Issue
- 3
- Journal Page Range
- p. 331-337
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 39023189
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- BAND THEORY; CAPACITANCE; ELECTRONIC STRUCTURE; EXPERIMENTAL DATA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; POISSON EQUATION; QUANTIZATION; QUANTUM WELLS; SCHROEDINGER EQUATION; SOLID SOLUTIONS; WAVE FUNCTIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DATA; DIFFERENTIAL EQUATIONS; DISPERSIONS; ELECTRICAL PROPERTIES; EQUATIONS; FUNCTIONS; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; INFORMATION; MIXTURES; NANOSTRUCTURES; NUMERICAL DATA; PARTIAL DIFFERENTIAL EQUATIONS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SOLUTIONS; WAVE EQUATIONS
Optional Information
- Notes
- 17 refs., 6 figs., 1 tab.