Published January 22, 1979
| Version v1
Journal article
Differences between ruby and Nd: YAG laser annealing of ion implanted silicon
- 1. Philips Research Laboratories, Eindhoven (Netherlands)
- 2. FOM-Instituut voor Atoom-en Molecuulfysica, Amsterdam (Netherlands)
Description
It is shown that the threshold power density for laser-induced epitaxial recrystallization of 2100 A thick amorphous silicon layers, produced by implantation of As, Sb, Sn and Ga ions, depends on the type and dose of dopants when the 1.06 μm radiation of a pulsed scanned Nd: YAG laser is used and that it is independent of these parameters for the 0.69 μm radiation of a single-pulse ruby laser. (Auth.)
Additional details
Publishing Information
- Journal Title
- Phys. Lett., A
- Journal Volume
- 69
- Journal Issue
- 6
- Series
- Phys. Lett., A.
- Journal Page Range
- 436-438
- ISSN
- 0375-9601
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 10462245
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ANTIMONY; ARSENIC; BACKSCATTERING; DOPED MATERIALS; GALLIUM; ION IMPLANTATION; ION SCATTERING ANALYSIS; LASER RADIATION; NEODYMIUM LASERS; RECRYSTALLIZATION; RUBY LASERS; RUTHERFORD SCATTERING; SILICON; TIN
- Descriptors DEC
- AMPLIFIERS; CHEMICAL ANALYSIS; ELASTIC SCATTERING; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; LASERS; METALS; NONDESTRUCTIVE ANALYSIS; RADIATIONS; SCATTERING; SEMIMETALS; SOLID STATE LASERS