InGaN nanoinclusions in an AlGaN matrix

GaN-based structures with InGaN quantum dots in the active region emitting in the near-ultraviolet region are studied. In this study, two types of structures, namely, with InGaN quantum dots in a GaN or AlGaN matrix, are compared. Photoluminescence spectra are obtained for both types of structures in a temperature range of 80-300 K and at various pumping densities, and electroluminescence spectra are obtained for light-emitting (LED) structures with various types of active region. It is shown that the structures with quantum dots in the AlGaN matrix are more stable thermally due to the larger localization energy compared with quantum dots in the GaN matrix. Due to this, the LED structures with quantum dots in an AlGaN matrix are more effective.