Published 1988
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Orientation dependence of characteristic X radiation yield during relativistic electron transit through crystal
Description
Orientational dependences of inelastic scattering of relativistic channeled electrons in crystals were investigated. Within the Born approximation the expression for inelastic scattering cross section and its approximation throught integral of close scattering with thermalised atoms were obtained. Orientational dependences are calculated for characteristic X-ray radiation under collimated 20 MeV electron beam transmission through silicon single crystal with account for X-ray absorption in matter. The new method was suggested for determination of electron dechanneling length with orientational dependences for characteristic X-ray radiation data
Availability note (English)
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20017217.pdf
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Additional details
Additional titles
- Original title (Russian)
- Ориентационная зависимость выхода характеристического рентгеновского излучения при прохождении релятивистских электронов через кристалл
Publishing Information
- Imprint Pagination
- 8 p.
- Report number
- IAE--4612/11
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20017217
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORN APPROXIMATION; CROSS SECTIONS; ELECTRON CHANNELING; INCIDENCE ANGLE; INELASTIC SCATTERING; MEV RANGE 10-100; MONOCRYSTALS; ORIENTATION; SILICON; X RADIATION
- Descriptors DEC
- CHANNELING; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; IONIZING RADIATIONS; MEV RANGE; RADIATIONS; SCATTERING; SEMIMETALS
Optional Information
- Notes
- 13 refs.; 3 figs.