Fabrication of SnS thin films by a novel multilayer-based solid-state reaction method

Tin monosulfide (SnS) films are fabricated by a multilayer-based solid-state reaction method on the glass substrate. By varying the layer thickness ratios of tin to sulfur, Sn-S alloying films with different chemical compositions are prepared. The analysis of the structure, chemical composition, optical and electrical properties is performed to evaluate the quality of the SnS films. The SnS film with approximate stoichiometric ratio can be obtained when the layer thickness ratio of tin to sulfur is controlled to 1. The SnS film is well crystallized with strong (0 4 0) orientation and has a band gap of 1.45 eV. The resistivity and activation energy are about 500 Ω ⋅ cm and 0.06 eV, respectively, at room temperature. The carrier concentration is determined to be 2.8 × 1016 cm−3. (paper)