Published 1991
| Version v1
Journal article
Interband absorption of light in semiconductor media taking into account the interaction of carriers with edge dislocations
Description
The factor of interband absorption of light by a non-degenerated electron gas in semiconductors is calculated in the second-order approximation of the perturbation theory. The problem was solved taking into account interactions of charge carriers with edge dislocations. The dependencies of absorptions ratio on the frequency of light and the temperature of a crystal are obtained in an explicit form. 5 refs
Additional details
Additional titles
- Original title (Russian)
- Внутризонное поглощение света в полупроводниковых средах с учетом взаимодействия носителей с краевыми дислокациями
Publishing Information
- Journal Title
- Izvestiya National'noj Akademii Nauk Armenii. Fizika
- Journal Volume
- 26
- Journal Issue
- 3
- Journal Page Range
- p. 133-137
- ISSN
- 1025-5613
INIS
- Country of Publication
- Armenia
- Country of Input or Organization
- Armenia
- INIS RN
- 34000003
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; CHARGE CARRIERS; EDGE DISLOCATIONS; ELECTRON GAS; PERTURBATION THEORY; VISIBLE SPECTRA
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; LINE DEFECTS; SPECTRA