Structure of thin CrSi2 films on Si(0 0 1)
Description
The morphology and texture of CrSi2 films grown on Si(0 0 1) is reported. The films have been prepared under ultra high vacuum conditions by reactive codeposition and by the template method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses have been performed to investigate the influence of the substrate temperature and the template thickness on the silicide texture and morphology. XRD evidences that the major part of CrSi2 crystallites grows with an orientation of CrSi2(0 0 1)[1 0 0] parallel Si(0 0 1)[1 1 0] within all present experiments. Considering the morphology and preferred orientation of the crystallites the substrate temperature of 700 deg. C is determined to be optimal for the codeposition growth method. A further improvement of the CrSi2(0 0 1) texture and an increase of the grain size by an order of magnitude is observed after deposition of 0.5 nm Cr onto the Si(0 0 1) substrate at room temperature prior to the codeposition of Cr and Si at 700 deg. C
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2003.12.011;
- PII
- S0169433203013576;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 227
- Journal Issue
- 1-4
- Journal Page Range
- p. 341-348
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38091854
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHROMIUM SILICIDES; DEPOSITION; FILMS; GRAIN ORIENTATION; GRAIN SIZE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- CHROMIUM COMPOUNDS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; MICROSCOPY; MICROSTRUCTURE; ORIENTATION; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SIZE; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.