Published August 1993 | Version v1
Journal article

GaAs solid state detectors for physics at the LHC

  • 1. Univ. of Glasgow, (United Kingdom). Dept. of Electrical and Electronic Engineering
  • 2. CERN, Geneva (Switzerland)
  • 3. Univ. of Sheffield, (United Kingdom). Dept. of Physics
  • 4. INFN, Florence (Italy)
  • 5. dell'Univ., Florence (Italy). Dipt. di Fisica
  • 6. INFN, Bologna (Italy)
  • 7. dell'Univ., Bologna (Italy). Dipt. of Fisica
  • 8. Rutherford-Appleton Lab., Oxon (United Kingdom)
  • 9. INFN, Modena (Italy)
  • 10. dell'Univ., Modena (Italy). Dipt. di Fiscia
  • 11. Univ. of Glasgow, (United Kingdom). Dept. of Physics and Astronomy
  • 12. Univ. of Lancaster, (United Kingdom). Dept. of Physics
  • 13. Univ. of Sheffield, (United Kingdom). Dept. of Electrical Engineering

Description

Progress with Schottky diode and p i n diode GaAs detectors for minimum ionizing particles is reported here. The radiation hardness and potential speed of simple diodes is shown to be more than competitive with silicon detectors. A discussion is given of the present understanding of the charge transport mechanism in the detectors as it influences their charge collection efficiency. Early results from micro-strip detectors are also described, (which are relevant for high radiation regions of LHC detectors near the beam pipe and in the forward region)

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
40
Journal Issue
4
Journal Page Range
p. 1225-1230.
ISSN
0018-9499
CODEN
IETNAE