Published August 2003 | Version v1
Journal article

XPS study of hydrogen permeation effect on SiC-C films

Description

70%SiC-C films were deposited with r.f. magnetron sputtering on stainless steel substrates followed by ion beam mixing. These films were permeated by hydrogen gas under the pressure of 3.23 x 107 Pa for 3 h at 500 K. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of C and Si in these 70%SiC-C films before and after hydrogen gas permeation. In addition, chemical states of contaminated oxygen were also checked. The effect of hydrogen permeation on those states in the 70%SiC-C films is discussed in this paper

Additional details

Identifiers

PII
S0168583X03009637;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
207
Journal Issue
4
Journal Page Range
p. 395-401
ISSN
0168-583X
CODEN
NIMBEU

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.