Published October 1998
| Version v1
Journal article
Photoelectric properties of n-Cd0.2 Hg0.8 Te/CdTe films with an anodic oxide
Description
The photomagnetic effect, the photoconductivity spectra, and galvanomagnetic coefficients are investigated as a function of the charge state of the surface in epitaxial films of narrow-gap semiconductor n-Cdx Hg1-x Te grown on single-crystal CdTe substrates and protected by an anodic oxide from the front side. The features of the photoelectric and galvanomagnetic characteristics are interpreted allowing for the charge in the band bending and in the surface recombination velocity, and also for the presence of a field induced by a band-gap gradient
Additional details
Additional titles
- Original title (Ukrainian)
- Fotoelektrichnyi vlastivostyi struktur n-Cd
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal
- Journal Volume
- 43
- Journal Issue
- 10
- Journal Page Range
- p. 1300-1302
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 30005665
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM TELLURIDES; ENERGY GAP; EPITAXY; GALVANOMAGNETIC EFFECT; INTERMETALLIC COMPOUNDS; MERCURY TELLURIDES; MONOCRYSTALS; PHOTOCONDUCTIVITY; SUBSTRATES; VISIBLE RADIATION
- Descriptors DEC
- ALLOYS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; MERCURY COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; TELLURIDES; TELLURIUM COMPOUNDS