Published 1995 | Version v1
Journal article Metadata-only

Effect of temperature, fast neutrous, and gamma radiation on the performance of silicon and germanium diodes

Creators

  • 1. Department of Physics, College of Education, Ibn-Al Haitham, University of Baghdad (Iraq)
  • 2. Department of Physics, College of Education , Ibn-Al Haitham, University of Baghdad (Iraq)
  • 3. Nucler Research Cantre, IAEC, Tuwaitha (Iraq)

Description

Three different types of silicon and germanium diodes are subjected to three affecting parameters, temperature, fast neutrons and gamma radiation dosages. The current - voltage characteristics of these diodes are plotted as a function of these aft.rig parameters. The three diodes show different responsing fashion.

Additional details

Publishing Information

Journal Title
Ibn Alhaitham Journal for Pure and Applied Sciences
Journal Volume
6
Journal Issue
1
Journal Page Range
p. 95-108
ISSN
1609-4042

INIS

Country of Publication
Iraq
Country of Input or Organization
Iraq
INIS RN
50025119
Subject category
S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
Descriptors DEI
GAMMA RADIATION; GERMANIUM; GERMANIUM DIODES; LOAD ANALYSIS; NEUTRONS; SILICON
Descriptors DEC
BARYONS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; IONIZING RADIATIONS; METALS; NUCLEONS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS

Optional Information

Notes
7 refs, 11 tabs , 11 figs