Published October 18, 2004 | Version v1
Journal article

Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

  • 1. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China)
  • 2. Department of Physic, Baptist University, Kowloon Tong, Hong Kong (China)
  • 3. Department of Physics, Suzhou University, Suzhou 215006 (China)
  • 4. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)

Description

Germanium oxide thin films on silicon substrate were produced using pulsed laser deposition method under adjusted substrate temperature and oxygen pressure. There existed two PL bands observed in our samples, violet and blue bands. We attributed both of them to the neutral oxygen vacancy (NOV) but of different types: GeGe and GeSi, respectively. Fourier transform infrared spectra (FTIR) measurements in our samples not only proved the GeOSi vibration but also assigned the peaks around 1000-bar cm-1 in Si-Ge oxide system qualitatively

Additional details

Identifiers

DOI
10.1016/j.physleta.2004.07.029;
PII
S0375-9601(04)01016-3;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
331
Journal Issue
3-4
Journal Page Range
p. 248-251
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.