Published December 2004 | Version v1
Journal article

Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation

  • 1. Universitaet Goettingen, II. Physikalisches Institut, Goettingen (Germany)
  • 2. VINCA Institute of Nuclear Sciences, Belgrade, Serbia-Montenegro (Yugoslavia)
  • 3. University of Maryland, Department of Physics, College Park (United States)

Description

In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV 14N2+ ion implantation in 57 Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Moessbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2 x 1017 ions/cm2. When heating these samples in vacuo up to 700 C, the iron-rich phases ε-Fe3N and γ'-Fe4N were produced. Starting at 600 C the silicide phase β-FeSi2 was also identified. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-004-2889-2

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
79
Journal Issue
8
Journal Page Range
p. 2093-2097
ISSN
0947-8396
CODEN
APAMFC