Published 2007 | Version v1
Journal article

Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 μm wavelength under resonant excitation

  • 1. Laboratoire d'Etude des Nanostructures et Semiconducteurs (LENS), CNRS UMR FOTON 6082 INSA, 20 Avenue des Buttes de Coesmes, 35043 Rennes Cedex (France)

Description

Two samples of 12 and 72 stacks of InAs/InP quantum dots were grown by molecular beam epitaxy to study the photoluminescence and the dynamical response by a pump-probe experimental set-up respectively. The carrier's lifetimes and differential transmission are performed in a function of the excitation density. A comparison of the differential transmission ratio for one quantum dot layer (InAs/InP) and one quantum well (InGaAs/InP) is also investigated. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200673214

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
4
Journal Issue
2
Journal Page Range
p. 454-457
ISSN
1610-1634

Conference

Title
International conference on superlattices, nano-structures and nano-devices (ICSNN-2006)
Dates
30 Jul - 4 Aug 2006
Place
Istanbul (Turkey)

Optional Information

Notes
With 5 figs., 18 refs.. SICI: 1610-1634(200702)4:2<454::AID-PSSC200673214>3.0.TX;2-P