Published April 1, 2020 | Version v1
Journal article Metadata-only

Optical Properties of Atomic Defects in Hexagonal Boron Nitride Flakes under High Pressure

Creators

  • 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride (hBN) at low temperatures using a diamond anvil cell (DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through pressure. Based on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions. (fundamental areas of phenomenology(including applications))

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/37/4/044204

Additional details

Identifiers

DOI
10.1088/0256-307X/37/4/044204;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
37
Journal Issue
4
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54074677
Subject category
S79: ASTROPHYSICS, COSMOLOGY AND ASTRONOMY; S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
BORON NITRIDES; DISTRIBUTION; EMISSION; OPTICAL PROPERTIES; PRESSURE COEFFICIENT; PRESSURE RANGE GIGA PA; RED SHIFT
Descriptors DEC
BORON COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; PRESSURE RANGE; REACTIVITY COEFFICIENTS