Published 1990
| Version v1
Report
Radiation-stimulated diffusion in thin films of chalcogenide glasses
Creators
- 1. Moskovskij Fiziko-Tekhnicheskij Inst., Moscow (Russian Federation)
Description
Changes in chemical composition of As-S films at high energy electron irradiation have been investigated. It has been revealed that there were no changes in concentration profile up to the dose 5x1013cm-2, but the electron irradiation in the range of 1x1014cm-2-3x1016cm-2 (as the laser one with wavelength 0,51μm) causes a nonmonotonic change of CAS/CS concentration ratio, the surface layer being rich in As atoms. Authors suppose, that at the doses more that 1x1015cm-2 there is transition to ''radiation'' type of the interaction of electrons with the matter. 3 refs.; 1 fig. (author)
Additional details
Additional titles
- Original title (Russian)
- Радиационно-стимулированная диффузия в тонких пленках халькогенидных стекол
Publishing Information
- Imprint Title
- Radiation materials science. V. 10
- Imprint Pagination
- 214 p.
- Journal Page Range
- p. 12-14.
- Report number
- INIS-mf--13549
Conference
- Title
- International conference on radiation materials science.
- Original Conference Title
- Mezhdunarodnaya konferentsiya po radiatsionnomu materialovedeniyu
- Dates
- 22-25 May 1990.
- Place
- Alushta (Ukraine).
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 24060874
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ARSENIC SULFIDES; CONCENTRATION RATIO; DIFFUSION; DOSE-RESPONSE RELATIONSHIPS; ELECTRON BEAMS; FILMS; GLASS; MEV RANGE 01-10; PENETRATION DEPTH; PHYSICAL RADIATION EFFECTS; SPRAY COATING
- Descriptors DEC
- ARSENIC COMPOUNDS; BEAMS; CHALCOGENIDES; DEPOSITION; ENERGY RANGE; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; RADIATION EFFECTS; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING
Optional Information
- Notes
- Imprint:Radiatsionnoe materialovedenie. Tom 10.